View IRF1010NS_8095049.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRF1010NS irf1010nl v dss = 55v r ds(on) = 11m ? i d = 85a s d g the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf1010nl) is available for low- profile applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175 c operating temperature fast switching fully avalanche rated description absolute maximum ratings parameter max. units i d @ t c = 25 c continuous drain current, v gs @ 10v 85 i d @ t c = 100 c continuous drain current, v gs @ 10v 60 a i dm pulsed drain current 290 p d @t c = 25 c power dissipation 180 w linear derating factor 1.2 w/ c v gs gate-to-source voltage 20 v i ar avalanche current 43 a e ar repetitive avalanche energy 18 mj dv/dt peak diode recovery dv/dt 3.6 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf in (1.1n m) 2 d pak to-262 irf1010nl IRF1010NS parameter typ. max. units r jc junction-to-case ??? 0.85 r ja junction-to-ambient ( pcb mounted,steady-state)** ??? 40 c/w thermal resistance 2014-8-30 1 www.kersemi.com
IRF1010NS/irf1010nl s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25 c, i s = 43a, v gs = 0v t rr reverse recovery time ??? 69 100 ns t j = 25 c, i f = 43a q rr reverse recovery charge ??? 220 230 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 85 290 a repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25 c, l = 270h r g = 25 ? , i as = 43a, v gs =10v (see figure 12) i sd 43a, di/dt 210a/s, v dd v (br)dss , t j 175 c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. notes: this is a calculated value limited to t j = 175 c . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. uses irf1010n data and test conditions. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.058 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 11 m ? v gs = 10v, i d = 43a
v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 32 ??? ??? sv ds = 25v, i d = 43a ??? ??? 25 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 44v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 120 i d = 43a q gs gate-to-source charge ??? ??? 19 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? ??? 41 v gs = 10v, see fig. 6 and 13
t d(on) turn-on delay time ??? 13 ??? v dd = 28v t r rise time ??? 76 ??? i d = 43a t d(off) turn-off delay time ??? 39 ??? r g = 3.6 ? t f fall time ??? 48 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3210 ??? v gs = 0v c oss output capacitance ??? 690 ??? v ds = 25v c rss reverse transfer capacitance ??? 140 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1030 250 mj i as = 4.3a, l = 270h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current 2014-8-30 2 www.kersemi.com
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 4 6 8 10 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 85a IRF1010NS/irf1010nl 2014-8-30 3 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 43a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 1000 0.0 0.6 1.2 1.8 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec IRF1010NS/irf1010nl 2014-8-30 4 www.kersemi.com
fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) IRF1010NS/irf1010nl 2014-8-30 5 www.kersemi.com
q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 0 100 200 300 400 500 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 18a 30a 43a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs IRF1010NS/irf1010nl 2014-8-30 6 www.kersemi.com
peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t * circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** IRF1010NS/irf1010nl 2014-8-30 7 www.kersemi.com
d 2 pak package outline d 2 pak part marking information 10.16 (.400) ref . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r ef. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 d im ens io n s after so ld er d ip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - g ate 2 - d rain 3 - so u rc e 2.54 (.100) 2x part number logo date code (yyw w ) yy = year ww = week a ssem bly lot code f530s 9b 1m 9246 a IRF1010NS/irf1010nl 2014-8-30 8 www.kersemi.com
package outline to-262 outline to-262 part marking information IRF1010NS/irf1010nl 2014-8-30 9 www.kersemi.com
tape & reel information d 2 pak 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 ( .532 ) 12.80 ( .504 ) 330.00 (14.173) max. 27.40 ( 1.079 ) 23.90 ( .941 ) 60.00 ( 2.362 ) m in . 30.40 ( 1.197 ) m ax. 26.40 (1.039) 24.40 (.961) notes : 1. comform s to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. IRF1010NS/irf1010nl 2014-8-30 10 www.kersemi.com

▲Up To Search▲

Price & Availability of IRF1010NS

	To Download IRF1010NS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .